Current Instability in n-and p-Type InSb under Crossed Electric and Magnetic Fields
スポンサーリンク
概要
- 論文の詳細を見る
The current density and the Hall coefficient of n-and p-type InSb were measured as a function of electric field, E, up to 1000 volt/cm in a transverse magnetic field, H, from 1000 to 6000 gauss at 77°K. In n-InSb, for H>2000 gauss, incoherent current oscillations with frequency of 20∼50 Mc/sec set in at E≃100 volt/cm, which is smaller than the intrinsic "breakdown" field, simultaneously with the saturation of the "Hall" drift velocity, while, for H<2000 gauss, oscillations were only observed at E≃200∼300 volt/cm (the "breakdown, field). As the magnetic field is increased, the threshold electric field of oscillations decreases, at first, in proportion to the reciprocal of H, reaches a minimum at H≃3500 gauss and increases with further increase of H. There seems to be optimum values of E and H for oscillations. Some discussions were made on a possibility of the instability of weakly ionized plasma due to the presence of a density gradient parallel to the current direction. In p-InSb, the threshold electric field of oscillations is nearly independent of magnetic field up to 6000 gauss and it is likely that the acoustic instability is the cause of oscillations.
- 社団法人応用物理学会の論文
- 1967-10-05
著者
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Ikoma Hideaki
Central Research Laboratory Tokyo Shibaura Electric Co. Ltd.
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Ikoma Hideaki
Central Research Laboratory Tokyo Shibaura (toshiba) Electric Co. Ltd.
関連論文
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- Optical Phonon Effect in GaAs
- High-Temperature Hall Effect in GaAs
- Electrical Properties of n- and p-Type Gallium Arsenide
- Current Oscillations in n-InSb
- Current Instability in n-and p-Type InSb under Crossed Electric and Magnetic Fields