Growth of Crystalline Silicon Films on Polycrystalline Substrate

スポンサーリンク

概要

• 論文の詳細を見る

• Crystalline films of silicon were prepared on a tungsten substrate by vacuum evaporation. The method used here was evaporation of silicon on a tungsten substrate, on which thin gold film was predeposited, keeping the substrate at 600-800℃. Growth of plane crystals or whisker crystals was observed depending on growth conditions such as substrate temperature, thickness of gold film and evaporation rate. The sizes of grown plane crystals were as large as several hundreds microns. Their orientation is (111) plane parallel to the substrate and their conductivity is n-type. The details of the growing technique and the examination of grown films will be explained and growth mechanism will be discussed.

• 社団法人応用物理学会の論文
• 1967-10-05

著者

• AKIYAMA Kenji

  Central Research Laboratory Matsushita Electric Industrial Co., Ltd.

• Oka Toshio

  Central Research Laboratory Matsushita Electric Industrial Co. Ltd.

• ISHIWATARI Keizo

  Central Research Laboratory, Matsushita Electric Industrial Co., Ltd.

• Ishiwatari Keizo

  Central Research Laboratory Matsushita Electric Industrial Co. Ltd.

• Akiyama Kenji

  Central Research Laboratory Matsushita Co. Ltd.

関連論文

• Effects of Heat Treatment on Thermally Oxidized Silicon
• Investigation of Si-Ta_2O_5 System Prepared by Reactive Sputtering
• Thermal Stresses in an Infinite Circular Cylinder Exposed to Moving Heat Sources
• Effects of Aluminum Electrode and Hydrogen Gas during Heat Treatments on MOS Structure
• Growth of Crystalline Silicon Films on Polycrystalline Substrate

スポンサーリンク