Electric Field Effect on the Absorption Edge in SbSI
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概要
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The shift of the absorption edge of SbSI due to the application of an electric field was measured as a function of field strength, temperature, and the wavelength of an incident light beam. The results qualitatively agree with Harbeke's results. Based on a phenomenological discussion, we obtain a relation E_g=E_<g0>+p^Px+β^xP^2, where E_g is the band edge energy at which the absorption coefficient is 150 cm^<-1>, x the strain, P is an electric polarization, p^P a constant, and β^x the polarization potential for the bound crystal. This relation can explain the field and temperature dependence of the edge shift.
- 社団法人応用物理学会の論文
- 1980-07-05
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