Photoresponse of Al-Amorphous Ge-nSi Systems

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概要

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• The photoelectric behavior of Al-Amorphous Ge-nSi systems has been reported in this investigation. It is observed that the photoresponse curve shows a maximum at 0.89 eV. We attribute this photocurrent peak to carrier transport in amorphous Ge and to the nature of the heterojunction between the amorphous Ge-single crystal Si. The barrier height obtained from the measurements is 0.72 eV to 0.78 eV, which is slightly higher than that obtained from I-V measurements. Possible reasons for this difference are discussed.

• 社団法人応用物理学会の論文
• 1980-04-05

著者

• Sinha N.p.

  Department Of Physics University Of Gorakhpur

• MISRA M.

  Department of Physics, University of Gorakhpur

• Misra M.

  Department Of Physics University Of Gorakhpur

関連論文

• Photoresponse of Al-Amorphous Ge-nSi Systems

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