Kerr Readout Characteristics of MnCuBi Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
The Kerr readout characteristics of MnCuBi thin films coated with dielectric SiO layer were studied experimentally. When the incident light intensity I_0 is small, the readout signal-to-noise ratio S/N depends on the reflectivity R, the Kerr rotation angle θ_k and I_0 as S/N ∝ (RI_0)^<0.6>θ_k. When I_0 is large, S/N shows a maximum. The maximum S/N of 4 is obtained when I_0 is about a half of the threshold laser intensity for the writing. This maximum seems to be associated with the decrease of the magnetization caused by the instantaneous increase of the temperature during the readout. In order to improve the S/N by the Kerr-effect enhancements, various dielectrics for the coating are theoretically compared, concluding that SiO seems to be appropriate.
- 社団法人応用物理学会の論文
- 1977-09-05
著者
-
Shibukawa Atsushi
Ibaraki Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
-
Shibukawa Atsushi
Ibaraki Electrical Communication Laboratory Nippon Telegraph And Telephon Public Corporation
関連論文
- Electron Irradiation Damage in Radiation-Resistant InP Solar Cells
- Proton Irradiation Damage in GaAs Single Crystals Examined for Solar Cells
- Kerr Readout Characteristics of MnCuBi Thin Films
- Optical and Magneto-Optical Properties of MnCuBi Thin Films