Switching Phenomena in Amorphous Chalcogenide Thin Films

概要

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Electronic switching transitions between on- and off- states in threshold-switching chalco-genide glass films were investigated to explore the electronic processes responsible for the transitions and to obtain information on improving device performances. To this end experimental as well as analytical investigations were carried out on the switching processes. Dynamic behaviors of the recovery processes, as well as threshold-on states, were measured directly bymeans of the RF reflection technique, which demonstrated a .nearIy exponential decay ofconductivity after elimination of the excitation pulse. Current increase taking place just before switching was measured and shown to be related to switching initiation. Analytical investigaions were carried out on the basis of a hot electron model. Applicability of the hot electron model to the electronic processes in chalcogenide films is discussed from various points of view.It is shown that the model can present a consistent picture on switching phenomena, if appropriate energy dependence of electron mobility is taken into account.
社団法人応用物理学会の論文
1977-03-05