A Mechanism for Shrinkage of Voids in CdS Single Crystal

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概要

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• The kinetics of the shrinkage of voids in a CdS single crystal during isothermal annealing was investigated and a new mechanism for the shrinkage is proposed. According to this new mechanism, the defects which contribute to the shrinkage of voids are Cd and sulfur interstitials. The total pressure in the voids is raised by the diffusion of these interstitials, and then it becomes supersaturated and the crystal grows on the surface of the voids. The voids shrink by this crystal growth, and the shrinkage rate of the voids in a CdS single crystal is found to be expressable as dr/dt=-AT^<-3/2>{(2γ/r)-P_2)P. The value, 2.3 eV, of the activation enthalpy for evaporation obtained in this experiment agrees well with the values of 2.2 eV and 2.27 eV obtained by Somorjai and Shiozawa, respectively.

• 社団法人応用物理学会の論文
• 1976-06-05

著者

• Shima Katsuhito

  Department Of Electronic Engineering Hokkaido University

関連論文

• Diffusion of Copper in Cadmium Sulfide Single Crystals
• Impurity Structures and Electrical Properties of CdS Single Crystals Heavily Doped with Copper
• A Mechanism for Shrinkage of Voids in CdS Single Crystal
• A Mechanism for Shrinkage of Voids in CdS Single Crystal

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