X-Ray Topographic Observation of Stacking Fault in Stoichiometric MgAl_2O_4 Spinel Single Crystals

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概要

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• Stacking faults and dislocations in stoichiometric MgAl_2O_4 single crystals are investigated by means of X-ray topography and chemical etching. The correspondence of an etch pit to a dislocation line and of an etch groove to a stacking fault is confirmed. The fault vector of the stacking fault is determined to be a/4<110>, and two fault systems in the spinel lattice are established to be of the type (100) a/4[110] and (100)a/4[110]. A model of atomic arrangement around the stacking fault is presented, and it is concluded that the stacking fault is constructed through a relative displacement of cation packing within the perfect anion sub-lattice.

• 社団法人応用物理学会の論文
• 1973-01-05

著者

• Ishii Eiichi

  The Government Industrial Research Institute

• Okuda Hiroshi

  The Government Industrial Research Institute

• TABATA Hideyo

  The Government Industrial Research Institute

関連論文

• X-Ray Topographic Observation of Stacking Fault in Stoichiometric MgAl_2O_4 Spinel Single Crystals

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