Optical Absorption Due to Acceptor Levels in Undoped ZnTe

概要

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Optical absorption in undoped ZnTe crystals grown by Piper-Polich method is measured in the photon-energy region from visible wavelegth to 15μm, at the temperature from 77 to 520 K. In the crystal grown in vacuum, a broadband absorption is observed in the photon-energy region 0.9 to 1.4 eV. It is found that this absorption band consists of a peak and a shoulder at 77 K. This absorption band is attributed to the electronic transitions from the split-off-valence band to the shallower and deeper acceptor levels, most likely due to Zn vacancy. By analyzing the experimental results, the energies of the acceptor levels are estimated to be 0.06 and 0.16eV above the top of the valenceband, and the radii of the acceptor states to be 9.5 and 6.5Å, for a shallower and deeper acceptor states, respectively. The spin-orbit splitting at the Γ point is determinedto be 0.95 eV.
社団法人応用物理学会の論文
1972-07-05