The Simulation of a Gunn Diode with Temperature Effects
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概要
- 論文の詳細を見る
Computer simulation was made to give the design principle of a Gunn diode operated under CW oscillation. Temperature profile due to heat dissipation in the diode were considered in our calculations. The great improvement of the efficiency can be achieved if we shorten the active layer and adopt an adequate concentration profile to compensate the effective high resistance toward the anode caused by the temperature gradient. For example, when the input power density was 8×l0^7 Wcm^<-3>, the oscillation could not be expected in the case of the flat profile because the resistance near the anode increases severely.We obtained the efficiency over 4.5% by choosing the active layer length and raising the concentration profile linearly to the anode by 15〜20%.
- 社団法人応用物理学会の論文
- 1972-10-05
著者
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Kamei Kiyoo
Microwave Semiconductor Eng. Section Tokyo Shibaura Electric Co. Ltd.(toshiba)
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Nishi Yoshio
Research And Development Center Tokyo Shibaura Electric Co. Ltd.(toshiba)