Some Electrical Properties of ZnGeP_2 Crystals

概要

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Hall effect and thermoelectric power are measured on p-type ZnGeP_2 single crystals. The ZnGeP_2 crystals are grown from Bi melt using the solution growth technique. The typical hole concentration 1×10^<13> cm^<-3> and mobility 18 cm^2/Vsec obtained from Hall measurements differ considerably from that (1×10^<16> cm^<-3> and 1 cm^2 Vsec resp.) calculated from temperature slope of resistance by B. Ray, but are in good agreement with results of only Hall measurements reported earlier. An acceptor energy level of 0.35 eV is derived from the temperature dependence of the Hall constant. The donor and acceptor concentrations are calculated supposing the neutral impurity scattering to be dominant. An approximative value of the effective mass of holes m_h^*=(0.5±0.1)m_0 is determined from the values of the thermoelectric power.
社団法人応用物理学会の論文
1972-01-05