Getter-Bias Sputtering of High Purity Metal Films in a High Current Vacuum Discharge in the 10^<-4> Torr Range

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概要

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• It is shown that by using a Titanium getter high purity and uniformly thick refractory metal films could be deposited at a very fast rate by a high current vacuum discharge in the 10^<-4> Torr range. The system described is based on Gaydou's technique. Various discharge characteristics have been studied and the film purity has been estimated by calculating the specific resistivities of the films before and after artificial aging. The lowest specific resistivitv of Tantalum film deposited with a getter and a 100V negative bias is 19.6 μΩ-cm. Adhesivity and possible applications of Tantalum films in thin film hybrid technology have also been studied.

• 社団法人応用物理学会の論文
• 1970-02-05

著者

• Pinto R.

  Tata Institute Of Fundamental Research

• SHAHA B.

  G. S. Technological Institute

関連論文

• Getter-Bias Sputtering of High Purity Metal Films in a High Current Vacuum Discharge in the 10^ Torr Range
• Voltage Controlled Negative Resistance (VCNR) in Reactively Sputtered Thin Nb_2O_5 Films

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