Studies on Adsorption and Nucleation of Ge on Tungsten Surface by FEM

スポンサーリンク

概要

• 論文の詳細を見る

• The formation of Ge nucleus on the tungsten surface kept at 77〜730°K has been investigated by Field Emission Microscope. Ge atoms deposited at low temperature arestacked on the impacted places. At above 400°K, deposited Ge atoms spread out over the surface to form a uniform thin layer on which small nuclei are formed. At 580°K the nucleus prefers to form on the close packed {110} planes at the impinging rate of 4×10^<13> atom/cm^2-sec. At 730°K the bridge types are formed between {111} and regions around {100} at the same rate. Even at 730°K, the nuclei are formed on the {110} planes at the rate 1×10^<14> atom/cm^2-sec, finally these nuclei coalesce to large crystallites on the loosely packed {111} and around {100} planes. The estimated sizes of a nucleus and a crystallite are 8Å in diameter and 520×180Å, respectively.

• 社団法人応用物理学会の論文
• 1970-12-05

著者

• Sugata E.

  Faculty Of Engineering Osaka University

• KIM H.

  Faculty of Engineering, Osaka University

• ARAKI H.

  Faculty of Engineering, Osaka University

関連論文

• Studies on Adsorption and Nucleation of Ge on Tungsten Surface by FEM

スポンサーリンク