Millimeter-Wave Photoconductivity and Donor State in N-Type InSb
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概要
- 論文の詳細を見る
N-type indium antimonide shows the photoconductive effect not only in the far infrared, but also in the millimeter-wave region. Millimeter-wave photoconductivity was observed in the 2 mm-wave region to clarify the origin of the effect. It is concluded that, in elements with low carrier concentration, the impurity transition between shallow donor levels is the main process for the photoconductivity, while the hot electron photoconductive effect is small as compared with the impurity photoconductivity. Performances as a millimeter-wave detector are also studied. Signal-to-noise ratio of InSb detector is superior to that of conventional silicon point contact diode. Rise and decay times of the detector without magnetic field are about 0.4 μs and 0.7μs respectively. This detector is useful even for measurements of incoherent radiation.
- 社団法人応用物理学会の論文
- 1970-01-05
著者
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Fujita Junji
Institute Of Plasma Physics Nagoya University
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Yamamoto Junya
Department Of Applied Physics Osaka University
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Yoshinaga Hiroshi
Department Of Applied Physics Faculty Of Engineering Osaka University
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Yamamoto Junya
Department Of Applied Physics Osaka University:(present Address) Low Temperature Center Osaka Univer
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FUJITA Junji
Institute of Plama Physics, Nagoya University
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