Domain Wall Caught in Dislocations in Ferroelectric Glycine Sulfate Crystals

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概要

• 論文の詳細を見る

• Simultaneous observation of both dislocation etch pits and ferroelectric domain walls was made on b-face of ferroelectric glycine sulfate crystals by etching technique with water. Negative end of the domain is pebbled while positive end is smooth. The dislocation etch pits are well discernible from the "pebbles" on the etched face. It was revealed that under applications of a d.c. electric field of about 30 v/cm a domain wall is caught in dislocations during the domain wall motion resulting in zig-zag shape. Evidences were obtained that also in as-grown crystals domain walls were caught in dislocations. It is assumed that dislocations in which a domain wall is caught are edge dislocations emerging out of b-face.

• 社団法人応用物理学会の論文
• 1962-11-15

著者

• Nakamura Terutaro

  Institute For Solid State Physics The University Of Tokyo

• Nakamura Terutaro

  Institute For Solid State Physics University Of Tokyo:department Of Physics Ochanomizu University

• NAKAMURA Hanako

  Department of Physics, Ochanomizu University

• Nakamura Terutaro

  Institute For Solid State Phsics The University Of Tokyo

• Nakamura Hanako

  Department Of Physics Ochanomizu University:(present Address) Shizuoka Johoku High School

• Nakamura T.

  Institute for Solid State Physics, University of Tokyo:Department of Physics, Ochanomizu University

• Nakamura T.

  Institute for Solid State Physics, University of Tokyo

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