4. プラズマイオン注入法におけるプラズマのPIC-MCCシミュレーション(<小特集>プラズマ応用技術におけるシミュレーション研究)

概要

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Plasma Immersion Ion Implantation (PIII) has been developed as a method for high-flux implantation and conformal implantation on a complex shaped target. In PIII, a negative pulsed high voltage is applied to the target immersed in low-pressure high-density plasma. Then an ion sheath is formed around the target and energetic ions are implanted on the target surface. By increasing the plasma density, conformal implantation is possible. However, this process can not be easily realized for a complex shaped target, for instance which has a trench or holes with high aspect ratios. In order to find the best condition in the process, it is very important to know the sheath shape around the target and the energy and flux distributions of implanted ions at each surface point. Plasma behavior in the PIII process has been simulated using "PEGASUS".
社団法人プラズマ・核融合学会の論文
2004-02-25