3. 種々のプラズマ源の電子エネルギー分布関数の比較 (<小特集>電子エネルギー分布関数とプラズマプロセス)

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概要

• 論文の詳細を見る

• EEDF profiles of various types of mass production plasma etching system were determined using a newly developed OES method. The OES method is based on the multiple tracer gas technique employing small amount of He, Ar, and Xe gases, and the EEDF profile is obtained by fitting to a bi-Maxwellian distribution. By using this method, it becomes possible to measure the EEDF in actual process plasma. The EEDF profile varied with the type of the etching system. In most cases, the EEDF was not a Maxwellian profile for all plasmas evaluated in this study. The relation of the EEDF profile and the plasma type is discussed in terms of their respective features, including power coupling type, driving frequency, and magnetic field. Further, the dissociation ratio of C_4F_8 gas is considered with respect to the EEDF profile for SiO_2 etching.

• 2001-07-25

著者

• 野田 周一

  技術研究組合超先端電子技術開発機構(aset)プラズマ技術研究室

関連論文

• エッチング選択性
• 3. 種々のプラズマ源の電子エネルギー分布関数の比較 (電子エネルギー分布関数とプラズマプロセス)

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