5. UHFプラズマ (<講座>プロセス用の新しい高密度プラズマの生成と診断V)

概要

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To solve the serious problems concerning the higher electron temperature in high-density plasma, we have recently proposed the use of UHF(Ultra-high frequency) for plasma production. It was demonstrated in this study that low-electron-temperature and high-density plasmas for large-scale and precise etching processes could easily be produced with excellent uniformity by appling UHF of 500 MHz power to the plasma through a spokewise antenna. Additionally, the UHF plasma was found to possess a wider process window for etching processes than an ICP(Inductively Coupled Plasma) excited at 13.56 MHz. In the UHF plasma, high ion density and a high energy tail in the electron energy distributions can be maintained in a wider pressure range from 3 mTorr to 20 mTorr, whereas in the ICP plasma these characteristics are drastically reduced by increasing the gas pressure.
社団法人プラズマ・核融合学会の論文
1998-04-25