Offset Gated Poly-Si TFTs without Sacrificing ON Current during Charging Pixel

概要

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We have fabricated a new offset gated device by employing photoresist reflow and measured various experimental data of new device, such as hydrogenation results and high frequency characteristics and analyze device characteristics as a function of driving frequency. Our devices have unique gate pattern and the hydrogenation effect is somewhat different from the previous results. The results suggest that with same offset length, the device with wider space between the main-gate and the sub-gate is more advantageous for hydrogenation Experimental results show that the leakage current of the new device is two orders of magnitude lower than that of the non-offset gated device, while the ON current of the new device is almost identical with the non-offset gated device in typically used frequency (10kHz〜100kHz).
一般社団法人映像情報メディア学会の論文
1997-02-14