Experimental Characterization of P-channel Polysilicon Conductively Modulated Thin-Film Transistors (第5回日韓台中情報ディスプレイ合同研究会(ASID '99)) -- (TFT Technology for AM LCD)
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概要
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A p-channel poly-Si CMTFT (Conductivity Modulated Thin-Film Transistor) is demonstrated and experimentally characterized. The transistor uses the concept of conductivity modulation in the offset region to obtain a significant reduction in on-state resistance. This structure can provide 1.5 to 2 orders of magnitude higher on-state current than that of the conventional offset drain TFT at drain voltage ranging from -15V to -5V while still maintaining low leakage current and simplicity in device operation. The p-channel CMTFT can be combined with the n-channel CMTFT to form CMOS high voltage drivers, which is very suitable for use in fully integrated large area electronic applications.
- 1999-03-19
著者
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Kwok Hoi
Center For Displav Research Department Of Electrical And Electronic Engineering The Hong Kong Univer
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Zhu Chunxiang
Center For Display Research Department Of Electrical And Electronic Engineering The Hong Kong Univer
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Sin Johnny
Center for Displav Research Department of Electrical and Electronic Engineering The Hong Kong Univer
関連論文
- Experimental Characterization of P-channel Polysilicon Conductively Modulated Thin-Film Transistors (第5回日韓台中情報ディスプレイ合同研究会(ASID '99)) -- (TFT Technology for AM LCD)
- Experimental Characterization of P-channel Polysilicon Conductivity Modulated Thin-Film Transistors
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