Circuit Applications of Amorphous-Silicon Thin Film Transistor-Ring Oscillator : LCD TECHNOLOGIES

概要

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The amplitude and the propagation delay time of oscillation waveform of the ring oscillator made of n-channel amorphous-silicon thin film transistors decrease as the geometry ratio β decreases. The propagation delay time can also be decreased by reducing the gate source/drain overlap and the channel length of the transistors. Measurements on a ring oscillator at V_<GG>=V_<DD>=15V show a propagation delay time of 0.5 μs per gate and a power-delay-time product of 15 pJ per gate. The channel length of the load and driver transistors is 3 μm with a gate source/drain overlap of 2 μm. With this experimental result, using amorphous-silicon thin-film transistors to manufacture the peripheral driver circuits on the panels of 640 x 480 active-matrix liquid crystal displays can be achieved.
社団法人映像情報メディア学会の論文
1993-10-28