1/2インチ200万画素順次走査列増幅型多重井戸転送CCDの提案(<論文特集>固体撮像とその関連技術)

概要

論文の詳細を見る
Multiple multielectrode-potential-wells in the vertical CCD (VCCD) are formed by a shiftresistor and transfer charges at a high speed in horizontal blanking time. Signals are amplified, sample-holed at each VCCD output, and read out by a shiftresistor. The single-layer CCD/CMOS process and the VCCD driving circuitry, which generates transfer and readout pulse, realize these concepts. The 1/2-inch 2 M-pixel progressive scan image sensor is designed using 0.8-μm technology and its fundamental charactetistics are evaluated. The sensor has a saturation signal charge of 3.4×10^4 electrons, a smear level of -92 dB, a sensitivitv of 5.4×10^2 electrons/1x with a 40% fill factor, no picture degradation caused by pulsing, a power dissipation of 89 mW, a random noise of 18 electrons, fixed pattern noises of 17 electrons in the dark and 2.5% in the light, and a chip size of 10.3(H)×6.0(V)mm^2.
社団法人映像情報メディア学会の論文
1996-02-20