A Fast and Accurate Program Method Providing Fully Controllable Threshold Voltage Distributions for Flash Memories

概要

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Various flash memory technologies have evolved with rapidly growing application areas. Several flash cell technologies such as NAND, AND, DiNOR [1] are using Fowler-Nordheim (F-N) tunneling. Improving the program speed while accurately controlling the threshold voltage (V_<TH>) distribution is one of key issues, and it becomes crucial for the multi-level cell technology [2] This paper discusses fundamentals and characteristics of a very accurate and fast programming method providing fully controllable V_<TH> distributions for flash memories using F-N tunneling for programming.
社団法人電子情報通信学会の論文
1997-07-24