Hot Hole Induced Degradation in Submicron Buried Channel LDD PMOSFET's
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概要
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Hot carrier degradation has been studied for buried channel LDD PMOSFET's. For p-channel MOSFET's, it is well known that the major hot carrier degradation is due to hot electron trapping. But, experimentally, a hot hole induced degradation was observed during D. C. stress in the saturation region. This degradation was mainly due to the generation of donor interface traps. The transconductance, Gm decreased and the magnitude of threshold voltage, |Vt| increased. The I_D-V_G characteristics shifted to the negative direction (negative ΔVt) with the subthreshold slope (S-factor) change. From this, it was determined that the degradation was caused by the donor type-iriterface traps. After the hot hole induced degradation, subsequent hot electron degradation was observed and resulted in enhanced GIDL (Gate Induced Drain Leakage) that may be due to the hot hole induced interface traps.
- 一般社団法人電子情報通信学会の論文
- 1995-07-28