Study about a photodiode characteristic improvement of the red light use that used Web pattern(Session A9 Optelectronic Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
スポンサーリンク
概要
- 論文の詳細を見る
Optica link is composed of a transmitter, a receiver and an optical fiber, and, as for the digital audio system, a connection track is comparatively short, and an APF (all plastic fiber) optical fiber is used for an enhancement of competitiveness of a price. Consider optical attenuation in a signal transmission process, and red light of 660 〜 670 nm is used center wavelength in APF (a diameter,:, 970/1000, μm) generally. Stand up in order to develop low voltage receiving IC of high sensitivity, first of all, photodetector development of high sensitivity must be preceded. Si PIN structure to operate in 5V was used, and photodetector of APF optical link was made with a design, and the characteristic was analyzed. In photodetector of two structure made at this time Optical lets a p+-shallow spread of a net network (web) shape is executed, and an effectiveness joint area is reduced, and joined receiving optical area extend space electrical charge scope of intrinsic area with horizontally, and web-pattern compares with circle type, and distinguished electricity and an optical characteristic are shown. When low joint capacity (Cj ≒4 pF) and optical signal were transmitted from an action voltage of -5V, the Web-pattern photodetector showed a low dark current (Id=180 pA) and a high optical signal electric current (output current : 1.221μA, sensitiveness : 0.55A/W at Vin=5V and LAPF=1m). Web structure was applied, and an optical electric current displayed a 103 or above difference in O(vin=OV) and 1(Vin=5V) state of a digital signal process, and beyond compare signal disconnection ability was shown. In case of photodetector of 5V, as for the AR layer, Si3N4 500 Å is formed, and reflectivity value of this time reaches 59% (vertical incidence, 660 nm) theoretically. On the other hand, the time when AR layer of double is Si3N4/SiO2=1500 Å /1800A has an optical reflectivity of less than 10% on an incidence optical wavelength of 660n nm, and, in case of photodetector which reverse voltage made with 1.8V runs in 1.65V, an error about a change of thickness is very the thickness that can be improved surely. And, as for the optical current characteristic, about 5 times increases had the optical current with 274nA in 55nA when Pc was -27dBm.
- 2004-06-25
著者
関連論文
- Study about a photodiode characteristic improvement of the red light use that used Web pattern(Session A9 Optelectronic Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Study about a photodiode characteristic improvement of the red light use that used Web pattern(Session A9 Optelectronic Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Design and Implementation of low voltage Receiver IC of the optical link use that used a Bipolar process(Session A9 Optelectronic Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Design and Implementation of low voltage Receiver IC of the optical link use that used a Bipolar process(Session A9 Optelectronic Devices)(2004 Asia-Pasific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))