Improved method for optimisation of design parameters of a field emitter array

概要

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The effect of geometry changes on the field enhancement factor(β) of the field emitter was investigated for the optimum setting of design parameters. For the analysis, a three dimensional field emission simulator and Taguchi statistical methods were used. Unlike the previous reports, there does not exist strong dependence between β and the microtip radius(r). The geometrical changes that produces the greatest effect are the gate to microtip distance(d), cone half angle(θ), vertical tip height(h), and radius(r) in that order. The S/N(signal to noise) ratio results indicate that with design parameter values of as r = 30 nm, d=0.7 nm,θ=20-35, and h=1-1.5μm results in a stable design one with minimum sensitivity to process variations.
社団法人電子情報通信学会の論文
1995-10-24