Embedded DRAM (eDRAM) Power-Energy Estimation Using Signal Swing-Based Analytical Model

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概要

• 論文の詳細を見る

• Embedded-DRAM (eDRAM) power-energy estimation model is proposed for system-on-a-chip (SOC) applications. The main feature is the signal swing based analytic (SSBA) model, which improves the accuracy of the conventional SRAM power-energy models. The power-energy estimation using SSBA model shows 95% accuracy compared with the transistor level power simulation for three fabricated eDRAMs. The SSBA model combined with the high-level simulator provides fast and accurate system level power-energy estimation of eDRAM.

• 社団法人電子情報通信学会の論文
• 2002-08-01

著者

• Park Yong-ha

  Department Of Ee. Korea Advanced Institute Of Science And Technology (kaist)

• KOOK Jeonghoon

  Department of EE. Korea Advanced Institute of Science and Technology (KAIST)

• YOO Hoi-Jun

  Department of EE. Korea Advanced Institute of Science and Technology (KAIST)

関連論文

• Embedded DRAM (eDRAM) Power-Energy Estimation Using Signal Swing-Based Analytical Model
• A Low Voltage High Speed Self-Timed CMOS Logic for the Multi-Gigabit Synchronous DRAM Application

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