Improvement of Luminescence Capability by Ordered and Disordered Semiconductors

概要

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The luminescence capability of semiconductors enhanced by ordering or disordering of atomic arrangement is described. The concept of a disordered crystalline semiconductor is given. The luminescence intensity from the AlAs/GaAs disordered superlattice in which individual layer thickness are artificially and disorderly changed becomes at least 500 times stronger at 77 K than that from a conventional ordered superlattice. The AlP/GaP disordered superlattice emits electroluminescence 4.5 times stronger at room temperature as compared with that from a conventional ordered superlattice. Recent experimental results of the enhanced luminescence from a disordered AlGaAs/GaAs quantum wire are introduced. Expected quantum optoelectronic effects of disordered quantum dot are given in further study. By contraries, the ordering enhances the luminescence capability in a disordered matrix. The luminescence intensity from the spontaneously ordered GaInP/GaAs also is enhanced as compared with the disordered GaInP/GaAs. Physical background of the effects is presented.
2002-02-01