Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's

スポンサーリンク

概要

• 論文の詳細を見る

• In order to design oscillators and switches phase noise characteristic is the key to obtain high quality frequency spectrums. Since the phase noise is directly affected by the 1/f noise of transistors in the circuit, 1/f noise measurement and modeling are important. This paper describes 1/f noise measurement, frequency and bias dependent flicker noise model, and noise parameter extraction method of MOSFET's. Also, for MOSFET's geometry dependencies of drain current 1/f noise are analyzed and modeled. The model has been verified by measuring the noise current spectral density of MOSFET's in two different process devices.

• 社団法人電子情報通信学会の論文
• 2002-02-01

著者

• Aoki Hitoshi

  Ks-design Technology Group At Agilent Technologies Japan Limited

関連論文

• Bias and Geometry Dependent Flicker Noise Characterization for n-MOSFET's

スポンサーリンク