Analysis of Tradeoffs between Efficiency, Power and Hot-Electron Reliability in GaAs MESFETs (Special Issue on Microwave and Millimeter Wave Technology)

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Tradeoffs between efficiency, power and reliability were analyzed for the GaAs MESFETs with variable recess structures. The MESFET process can be optimized for either best power/efficiency performance or best reliability by varying the width of the first recess. If the first recess width is increased by 0.4μm, an estimated order of magnitude increase in device lifetime, limited by hot-electron-induced degradation, can be achieved at the expense of 3% in power-added efficiency and 20 mW/mm in output power. The reported hot-electron reliability highlights include maximum sustainable reverse gate current stress of 100mA/mm and (Stress)×(Lifetime) figure of merit of 12.5 A・hr/cm which advances the present state of the art by approximately an order of magnitude. The introduced (Stress)×(Lifetime) figure of merit is essential for design-for-reliability of high efficiency power amplifiers.
社団法人電子情報通信学会の論文
1999-07-25