Determination of Base and Emitter Resistances in Bipolar Junction Transistors from Low Frequency Noise and Static Measurements (Special Issue on Microelectronic Test Structures)

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概要

• 論文の詳細を見る

• A novel method of extraction of emitter, R_e, and base, R_b, resistances of bipolar junction transistors, BJTs, is proposed. R_e and R_b are obtained from static characteristics and noise power spectral density of low frequency, 1/f, fluctuations, measured in the base and collector currents of the devices. Measurements carried out on quasi self-aligned silicon BJTS show that R_e and R_b values obtained by the proposed method scale correctly with transistor dimensions and match the values estimated from the device layout.

• 社団法人電子情報通信学会の論文
• 1999-04-25

著者

• Ghibaudo G

  Laboratoire De Physique Des Composants A Semiconducteurs

• Ghibaudo Gerard

  Laboratoire De Physique Des Composants A Semiconducteurs Enserg

• LLINARES Pierre

  France Telecom, Centre National d'Etudes des Telecommunications

• MOURIER Yannick

  Universite Montpellier II-Sciences et Techniques du Languedoe

• GAMBETTA Nicolas

  ST-Microelectronics

• LAURENS Michel

  ST-Microelectronics

• CHROBOCZEK Jan

  France Telecom, Centre National d'Etudes des Telecommunications

• Chroboczek Jan

  France Telecom Centre National D'etudes Des Telecommunications

• Llinares P

  France Telecom Centre National D'etudes Des Telecommunications:st-microelectronics

• LLINARES Pierre

  France Telecom, Centre National d'Etudes des Telecommunications:ST-Microelectronics

• GHIBAUDO Gerard

  Laboratoire de Physique des Composants a Semiconducteurs

関連論文

• Determination of Base and Emitter Resistances in Bipolar Junction Transistors from Low Frequency Noise and Static Measurements (Special Issue on Microelectronic Test Structures)
• Characterization of Low-Pressure Chemical Vapor Deposited Polycrystalline Silicon Thin-Film Transistors by Low-Frequency Noise Measurements

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