Simple Small-Signal Model for 3-Port MOS Transistors

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概要

• 論文の詳細を見る

• The inclusion of the non-quasi-static effect is crucial in the simulation of the microwave circuits for MOS transistors. This report proposes a simple model which includes this effect in small-signal simulation. The simulated results are consistent with the measured data up to a frequency that is 30 times higher frequency than the cut-off frequency.

• 一般社団法人電子情報通信学会の論文
• 1996-12-25

著者

• Niitsu Yoichiro

  The Ulsi Device Engineering Lab. Toshiba Corporation R & D Center

関連論文

• Simple Small-Signal Model for 3-Port MOS Transistors

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