Process and Device Technologies for Subhalf-Micron LSI Memory (Special Section on High Speed and High Density Multi Functional LSI Memories)

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概要

• 論文の詳細を見る

• The progress of LSI technologies makes it possible to fabricate 256 MDRAM. However, it depends on the cost effectiveness of device fabrication that LSI memory can continue to be the technology driver or not. It is indespensable to make the device, process, and equipment as simple as possible for next generation LSI. For example, wavefront technologies in lithography, high energy ion implantation, and simple DRAM cell with SOI structure or high dielectric constant capacitor, are under development to satisfy both device performance improvement and process simplicity.

• 社団法人電子情報通信学会の論文
• 1994-08-25

著者

• Tsukamoto Katsuhiro

  The Ulsi Laboratory Mitsubishi Electric Corporation

• Morimoto Hiroaki

  the ULSI Laboratory, Mitsubishi Electric Corporation

• Morimoto Hiroaki

  The Ulsi Laboratory Mitsubishi Electric Corporation

関連論文

• Process and Device Technologies for Subhalf-Micron LSI Memory (Special Section on High Speed and High Density Multi Functional LSI Memories)

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