Estimation of Yield Suppression for 1.5 V-1 Gbit DRAMs Caused by Threshold Voltage Variation of MOSFET due to Microscopic Fluctuation in Dopant Distributions

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概要

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• This paper newly estimates the yield suppression for 1.5 V-1 Gbit DRAM caused by threshold voltage variation of MOSFET due to microscopic fluctuations in dopant distributions within the channel region and points out the limitation of the conventional redundancy techniques. The yield suppression is estimated for four main circuit blocks, the memory cell transfer transistor, bit line sense amplifier S/A, I/O line differential amplifier D/A, and the peripheral circuit. It is newly found that for 1.5 V-1 Gbit DRAM due to the effect of the newly estimated threshold voltage variation of MOSFET the bit failures of memory cells become the most dominant failure mode and the failure of D/A which can be ignored for 64 Mbit DRAM level can no longer be neglected. Furthermore, the novel optimized redundancy technique for replacing these failure is described.

• 一般社団法人電子情報通信学会の論文
• 1994-02-25

著者

• Minami Takaaki

  The Semiconductor Device Engineering Laboratory Toshiba Corporation

• Watanabe Shigeyoshi

  The Ulsi Research Center Toshiba Corporation

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• Estimation of Yield Suppression for 1.5 V-1 Gbit DRAMs Caused by Threshold Voltage Variation of MOSFET due to Microscopic Fluctuation in Dopant Distributions

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