Space-Time Galerkin/Least-Squares Finite Element Formulation for the Hydrodynamic Device Equations (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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概要

• 論文の詳細を見る

• Numerical simulation of the hydrodynamic semiconductor device equations requires powerful numerical schemes. A Space-time Galerkin/Least-Squares finite element formulation, that has been successfully applied to problems of fluid dynamics, is proposed for the solution of the hydrodynamic device equations. Similarity between the equations of fluid dynamics and semiconductor devices is discussed. The robustness and accuracy of the numerical scheme are demonstrated with the example of a single electron carrier submicron silicon MESFET device.

• 社団法人電子情報通信学会の論文
• 1994-02-25

著者

• Dutton R

  Stanford Univ. Usa

• Aluru N.R.

  the Applied Electronics Laboratory, Stanford University

• Law Kincho

  the Applied Electronics Laboratory, Stanford University

• Pinsky Peter

  the Applied Electronics Laboratory, Stanford University

• Raefsky Arthur

  the Applied Electronics Laboratory, Stanford University

• Goossens Ronald

  the Applied Electronics Laboratory, Stanford University

• Dutton Robert

  the Applied Electronics Laboratory, Stanford University

• Aluru N.r.

  The Applied Electronics Laboratory Stanford University

• Goossens Ronald

  The Applied Electronics Laboratory Stanford University

• Pinsky Peter

  The Applied Electronics Laboratory Stanford University

• Raefsky A

  The Applied Electronics Laboratory Stanford University

• Law K

  Stanford Univ. Ca Usa

関連論文

• Space-Time Galerkin/Least-Squares Finite Element Formulation for the Hydrodynamic Device Equations (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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