A non-Local Formulation of Impact Ionization for Silicon (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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概要

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• Impact ionization (II) in two n^+-n^--n^+ device structures is investigated. Data obtained from self-consistent Monte-Carlo (SCMC) simulations of the devices is used to show that the average energy (w^∼) of only those high energy electrons contributing to II is an appropriate variable for the modeling of II. A transport model allowing one to calculate w^∼ is derived from the Boltzmann transport equation (BTE) and calibrated by the SCMC simulation results. The values of w^∼ and the II coefficient, α_ii, predicted by the proposed model are in good agreement with the Monte-Carlo data.

• 一般社団法人電子情報通信学会の論文
• 1994-02-25

著者

• Tang Ting-wei

  The Department Of Electrical And Computer Engineering University Of Massachusetts

• Scrobohaci Paul

  the Department of Electrical and Computer Engineering, University of Massachusetts

• Scrobohaci Paul

  The Department Of Electrical And Computer Engineering University Of Massachusetts

関連論文

• A non-Local Formulation of Impact Ionization for Silicon (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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