Two-Dimensional Modeling of Self-Aligned Silicide Processes with the General-Purpose Process Simulator OPUS (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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概要

• 論文の詳細を見る

• A two-dimensional self-aligned silicide (SALICIDE) model has been developed using the general-purpose process simulator OPUS. A new two-dimensional growth model is proposed. Utilizing a newly-difined effective silicide thickness, the model accounts both silicon-diffusion and metal-diffusion limited silicide growth. Silicide lateral-growth along a sidewall spacer is successfully simulated for Si-diffusion limited silicide growth. Complete MOSFET process simulation with a SALICIDE process is demonstrated for the first time.

• 社団法人電子情報通信学会の論文
• 1994-02-25

著者

• Kuroda S

  The Vlsi Research And Development Center Oki Electric Industry Company Ltd.

• Kai Kazuhiko

  The Vlsi Research And Development Center Oki Electric Industry Company Ltd.

• Nishi Kenji

  The Vlsi Research And Development Center Oki Electric Industry Company Ltd.

• Kuroda Shigeki

  The Vlsi Research And Development Center Oki Electric Industry Company Ltd.

関連論文

• Two-Dimensional Modeling of Self-Aligned Silicide Processes with the General-Purpose Process Simulator OPUS (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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