Synchrotron Radiation Induced Direct Projection Patterning of Aluminum on Si and SiO_2 Surfaces (Special Issue on Opto-Electronics and LSI)

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概要

• 論文の詳細を見る

• A new direct projection patterning technique of aluminum using synchrotron radiation (SR) is proposed. It is based on the thermal reaction control effect of SR excitation. In the case of the Si surface, pure thermal growth is possible at ℃, however, this growth is suppressed perfectly by SR irradiation. On the other hand, Al growth on the SiO_2 surface is impossible at the same temperature thermally, however, SR has an effect to initiate thermal reaction. Both new effects of SR, suppression and initiation, are clarified to be caused by atomic order level thin layers formed from CVD gases by SR excitation on the surfaces. By using these effects, the direct inverse and normal projection patterning of Al are successfully demonstrated.

• 社団法人電子情報通信学会の論文
• 1993-01-25

著者

• Uesugi Fumihiko

  Opto-electronics Research Laboratories Nec Corporation

• Nishiyama Iwao

  Opto-electronics Research Laboratories Nec Corporation

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• Influence of Halogen Plasma Atmosphere on SiO_2 Etching Characteristics
• After-Corrosion Suppression Using Low-Temperature Al-Si-Cu Etching
• Synchrotron Radiation Induced Direct Projection Patterning of Aluminum on Si and SiO_2 Surfaces (Special Issue on Opto-Electronics and LSI)

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