On the High-Frequency Characteristics and Model of Bulk Effect in RF MOSFETs(<Special Section>Microelectronic Test Structures)

スポンサーリンク

概要

• 論文の詳細を見る

• The new design with minimum loop inductance suitable for the measurements at high frequencies with substrate bias is described. These test structures allow characterizing 4-terminal MOSFETs with a standard two-port Network Analyzer. The high-frequency behavior of bulk effect in MOSFETs is studied at different bias conditions for a 0.18μm RF CMOS technology. The BSIM3 extension RF MOSFET modeling with bulk effect is verified and analyzed from two-port Y-parameter results. The result of RF NMOSFET shows that a good accuracy of the 4-terminal RF MOSFET modeling is achieved.

• 社団法人電子情報通信学会の論文
• 2005-05-01

著者

• Ho Patricia

  Tsmc

• Kuo Chin

  Tsmc

• Kuo Darryl

  Tsmc

• YANG Ming

  TSMC

• WANG Yo

  TSMC

• YEH Tzu

  TSMC

関連論文

• On the High-Frequency Characteristics and Model of Bulk Effect in RF MOSFETs(Microelectronic Test Structures)

スポンサーリンク