A Power Amplifier Model Considering Drain Current Dependence upon Input Power for High Efficiency Transmitter Power Amplifiers in Mobile Communications(Active Devices and Circuits)(<Special Section>Advances in Characterization and Measurement Technologies

概要

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In this paper, we propose a simple and accurate transfer function model of the power amplifiers for mobile communications. Detail analysis yields a generalized model for AM/AM characteristics in classes AB, B, and C. The analysis includes the effect of drain current variation with input level variation. This model introduces a leadline variation ratio to indicate the change of drain current and to represent the operation classes in a small signal region. Further discussion leads to simplified approximate equations for the AM/AM characteristics, and the estimation procedures for the simplified model parameters. Using the derived procedures, an efficient power amplifier employing pseudomorphic high electron mobility transistor (PHEMT) is fabricated for the 2 GHz band. Finally, the various characteristics given by the model, simulator and measurements are compared and found to agree well in the range of 20 dB below the saturated output level. The model is very effective for characterizing the power amplifiers that are used in linear compensation techniques such as predistortion methods, due to its severe nonlinearity of AM/AM and AM/PM characteristics.
社団法人電子情報通信学会の論文
2004-05-01