High-Rate Deposition of Titanium Dioxide Films with Photocatalytic Activities by Gas Flow Sputtering(<Special Section>Recent Progress in Oxide Thin Films by Sputtering)

概要

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Photocatalytic TiO_2 films were prepared by reactive gas flow sputtering (GFS), which enables sputter-deposition at a high pressure of about 100Pa. A pure Ti tube was used as the target, and the O_2 gas was supplied in front of the substrate, resulting in a very stable discharge and a high deposition rate of 80 nm/min. The crystal structure and morphology of TiO_2 films were found to strongly depend on the flow rate of O_2 gas during sputtering. Polycrystalline films composed of rutile and anatase crystallites were deposited at a low O_2 flow rate of less than 2 seem when Ar flow rate was set at 300 seem, and amorphous films were deposited at higher O_2 flow rates. Polycrystalline films composed of very small crystallites showed high levels of photocatalytic activity, while amorphous films showed no activity.
社団法人電子情報通信学会の論文
2004-02-01