A High-Speed Current-Mode Multilevel Identifying Circuit for Flash Memories

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概要

• 論文の詳細を見る

• A parallel current-mode multilevel identifying circuit for flash memories is proposed. The sensing scheme based on the CMOS cross-coupled structure modified from the clamped hit-line sense amplifier achieves high speed and low power dissipation. The offset of the proposed sense amplifier due to mismatch is also reduced significantly. The circuit has been fabricated using 0.6μm CMOS technology. The simulation and measurement indicate the sensing speed reaches 1 ns at 3V supply voltage with average power consumption about 2mW at 50MHz.

• 社団法人電子情報通信学会の論文
• 2003-02-01

著者

• Lin Hongchin

  The Authors Are With The Department Of Electrical Engineering. National Chung-hsing University

関連論文

• A High-Speed Current-Mode Multilevel Identifying Circuit for Flash Memories

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