Power Amplifier Using Combined SiGe HBTs with and without Selectively Ion Implanted Collector(<Special Issue>Heterostructure Microelectronics with TWHM2003)

スポンサーリンク

概要

• 論文の詳細を見る

• We present excellent performance of a novel two-stage SiGe hetero-hipolar transistor (HBT) power amplifier (PA) in which different collector doping structures were employed for the first and second stages. A selectively ion implanted collector (SIC) structure was employed for the first stage HBT in order to obtain a high gain, while without-SIC structure was used for the second stage HBT in order to achieve a high breakdown voltage. At 1.95 GHz, the total PAB of 31% and a gain of 28 dB with an output power (P_<out>) of 26 dBm were obtained while the adjacent channel power ratio (ACPR) was less than -38 dBc for W-CDMA modulation signals.

• 社団法人電子情報通信学会の論文
• 2003-10-01

著者

• TANAKA Tsuyoshi

  Matsushita Electric Industrial Co., Ltd.

• Matsuno Toshinobu

  Matsushita Electric Co. Ltd.

• KANDA Atsuhiko

  Matsushita Electric Co., Ltd.

• Kanda Atsuhiko

  Matsushita Electric Co. Ltd.

• Tanaka Tsuyoshi

  Matsushita Electric Co. Ltd.

関連論文

• Low Noise and Low Distortion Performances of an AlGaN/GaN HFET(Heterostructure Microelectronics with TWHM2003)
• Power Amplifier Using Combined SiGe HBTs with and without Selectively Ion Implanted Collector(Heterostructure Microelectronics with TWHM2003)

スポンサーリンク