The Structures of CPW PHEMT's for Applications of Millimeter-Waves(<Special Section>Papers Selected from 2003 International Technical Conference on Circuits/Systems, Computers and Communications(ITC-CSCC 2003))
スポンサーリンク
概要
- 論文の詳細を見る
The parasitic capacitances induced in the spaces between an air-bridge interconnection and a drain pad (C_<ad>), and between an air-bridge interconnection and a gate head (C_<ag>) from a power CPW PHEMT are not negligible. In this paper, a modified equivalent circuit model for a CPW PHEMT and an improved CPW PHEMT for millimeter-wave applications are proposed. These were proved by measuring the fabricated CPW PHEMT and improved CPW PHEMT. These capacitances were confirmed by measuring the gate-source coupling using CPW PHEMT patterns without an active layer. From the measurements, the improved CPW PHEMT has the lowest coupling (loss) and the highest S_<21> gain among four different types tested at 60GHz. And the improved CPW PHEMT is a feasible device which can be directly applied in millimeter-waves as a power device.
- 社団法人電子情報通信学会の論文
- 2004-06-01
著者
-
Lee M‐k
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
-
Lim B‐o
Dongguk Univ. Seoul Kor
-
Lee Bok-hyung
Millimeter-wave Innovation Technology Research Center (mint) Dongguk University
-
LIM Byeong-Ok
MINT, Dongguk University
-
RANG Tae-Shin
MINT, Dongguk University
-
LEE Bok-Hyung
MINT, Dongguk University
-
LEE Mun-Kyo
MINT, Dongguk University
-
RHEE Jin-Koo
MINT, Dongguk University
-
Rang Tae-shin
Mint Dongguk University
-
Rhee Jin-koo
Mint Dongguk University
関連論文
- The Fabrication of the Low Loss Transmission Line and Low Pass Filter using Surface Microelectromechanical Systems Technology
- Fabrication of low loss transmission line with Surface micromachining technology(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- High Conversion Gain Millimeter-Wave Monolithic IC Quadruple Subharmonic Mixer
- Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-μm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors
- The Structures of CPW PHEMT's for Applications of Millimeter-Waves(Papers Selected from 2003 International Technical Conference on Circuits/Systems, Computers and Communications(ITC-CSCC 2003))
- High Conversion Gain Millimeter-Wave Monolithic IC Quadruple Subharmonic Mixer
- Small-Signal Analysis of High Maximum Frequency of Oscillation 0.1-μm Off-Set Gamma-Shaped Gate InGaAs/InAlAs/GaAs Metamorphic High-Electron-Mobility Transistors