Drain Current Zero-Temperature-Coefficient Point for CMOS Temperature-Voltage Converter Operating in Strong Inversion(<Special Section>Analog Circuit Techniques and Related Topics)
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概要
- 論文の詳細を見る
Temperature dependence of drain current is analyzed in detail in terms of mobility and threshold voltage. From the analyses, it is proved that a point exists that the drain current is fixed without depending on temperature when the MOSFET operates in strong inversion. Applying this characteristic, a CMOS temperature-voltage converter operating in strong inversion with high linearity is proposed. SPICE simulation and experimental results are shown, and the corresponding performances are discussed.
- 社団法人電子情報通信学会の論文
- 2004-02-01
著者
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IKEDA Hidetoshi
Department of Neurosurgery,Tohoku University
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TAKAKUBO Hajime
Department of Electrical,Electronic, and Communication Engineering, Chuo University
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TAKAKUBO Kawori
Department of Electronics Engineering, Tokai University
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Ikeda H
Department Of Electrical Electronic And Communication Engineering Chuo University
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Takakubo K
Department Of Electronic & Communication Meiji University
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Takakubo Kawori
Department Of Electronics And Bioinformatics Meiji University
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Takakubo H
Department Of Electrical Electronic And Communication Engineering Chuo University
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Takakubo Hajime
Department Of Electrical Electronic And Communication Engineering
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Ikeda Hidetoshi
Department Of Neurosurgery Ohara Medical Center
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TAKAKUBO Kawori
Department of Electronic & Communication, Meiji University
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