Multiple-Valued T-Gate Based on Multiple Junction Surface Tunnel Transistor

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概要

• 論文の詳細を見る

• A novel multiple-valued transfer gate (T-gate) consisting of multiple-junction surface tunnel transistors (MJSTTs) and hetero-junction FETs (HJFETs) was developed and its operation was confirmed by both simulation and experiment. The number of the devices required to form the T-gate can be drastically reduced because of the high functionality of the MJSTT; namely only three MJSTTs and three HJFETs are required to fabricate the three-valued T-gate. This number of transistors is less than half that of a conventional circuit. The fabricated circuit exhibited abasic T-gate operation with various logic functions. Furthermore, only one T-gate is needed to form a multiple-valued D-flip-flop (D-FF) circuit.

• 社団法人電子情報通信学会の論文
• 2002-07-01

著者

• Uemura T

  Department Of Electronics And Information Engineering Hokkaido University

• Uemura Tetsuya

  Department Of Electronics And Information Engineering Hokkaido University

• BABA Toshio

  Silicon System Research Laboratories, NEC Corporation

• Baba Toshio

  Silicon System Research Laboratories Nec Corporation

関連論文

• Multiple-Valued T-Gate Based on Multiple Junction Surface Tunnel Transistor
• High Luminescence Polarization of InGaAs-AlGaAs Strained Layer Superlattice Fabricated as a Photocathode of Spin-Polarized Electron Source : Optical Properties of Condensed Matter

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