Fabrication Technology for Nb Integrated Circuits(Special Issue on Superconductive Electronics)

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概要

• 論文の詳細を見る

• Fabrication technology for Nb integrated circuits has been developed. In developing fabrication technology, the key process steps are the etching to form fine Nb electrodes and the formation of reliable insulation layers. The standard process has been developed focusing on reproducibility and reliability. In the process, conventional reactive ion etching and RF biassputter deposition are used. The number of Nb wiring layers is two, and standard deviation (σ) of critical current is 0.9%, 2.3%, and 4.7% for the junction sizes of 2μm, 1.4μm, and 1μm, respectively. The advanced process has also been developed focusing on capability of increasing the integration scale. Electron-cyclotron-resonance plasma etching and mechanical polishing planarization have been developed as advanced process technology. The number of Nb wiring layers is three, and σ is improved to 0.8%, 0.7%, and 1.7% for the junction sizes of 2μm, 1.4μm, and 1μm, respectively. Integration limits are discussed and it is estimated that the maximum number of junctions is in the order of 10^5 and 10^7 for the standard and the advanced process, respectively. A large-scale superconducting circuit such as a several M-bit RAM can be realized in the future by using these fabrication technologies.

• 社団法人電子情報通信学会の論文
• 2001-01-01

著者

• Numata Hideaki

  The Authors Are With Fundamental Research Laboratories System Devices And Fundamental Research Nec C

• Tahara Shuichi

  The Authors Are With Fundamental Research Laboratories System Devices And Fundamental Research Nec C

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• Fabrication Technology for Nb Integrated Circuits(Special Issue on Superconductive Electronics)

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