New Developments and Old Problems in Grid Generation and Adaptation for TCAD Applications (Special lssue on SISPAD'99)

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概要

• 論文の詳細を見る

• We present several challenging gridding problems for multi-dimensional device and process simulation and discuss how new strategies might contribute to their solution. Formulating grid quality requirements for the standard Scharfetter-Gummel box method discretization in device simulation, we domonstrate how the offsetting techniques compares with quadtree grid generation methods and how they apply to modern device designs. Further we present a grid adaptation approach which respects the grid quality criteria and touch upon the main adaptation difficulties within device simulation. For the 3D moving boundary grids in process simulation we present a new algorithm.

• 社団法人電子情報通信学会の論文
• 2000-08-25

著者

• Villablanca Luis

  The Ise Integrated Systems Engineering Ag

• Schmithuesen B

  Eth Zuerich Zuerich Che

• Fichtner Wolfgang

  Integrated Systems Laboratory Eth Zurich

• Fichtner Wolfgang

  Integrated Systems Laboratory Swiss Federal Institute Of Technology Zurich (ethz)

• Krause Jens

  Integrated Systems Laboratory, Swiss Federal Institute of Technology Zurich (ETHZ)

• Schmithusen Bernhard

  Integrated Systems Laboratory, Swiss Federal Institute of Technology Zurich (ETHZ)

• Krause Jens

  Integrated Systems Laboratory Swiss Federal Institute Of Technology Zurich (ethz)

関連論文

• Three Dimensional Transient Simulation of Complex Silicon Devices
• New Developments and Old Problems in Grid Generation and Adaptation for TCAD Applications (Special lssue on SISPAD'99)

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