Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile (Special lssue on SISPAD'99)

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概要

• 論文の詳細を見る

• This work presents the first comprehensive fullband Monte Carlo model for the simulation of silicon/silicon-germanium devices with arbitrary germanium profiles. The model includes a new CPU and memory efficient method for the discretization of the Brillouin zone based on adaptive nonuniform tetrahedral grids and a very efficient method for transfers through heterointerfaces in the case of irregular k^→-space grids. The feasibility of the FB-MC simulation is demonstrated by application to an industrial HBT with a graded germanium profile and different aspects of the microscopic carrier transport are discussed. Internal distributions of the transistor are calculated with a very low noise level and high efficiency allowing a detailed investigation of the device behavior.

• 社団法人電子情報通信学会の論文
• 2000-08-25

著者

• Keith Stefan

  The University Of Bremen

• Jungemann Christoph

  the University of Bremen

• Meinerzhagen Bernd

  the University of Bremen

• Meinerzhagen B

  Univ. Bremen Bremen Deu

• Jungemann C

  Univ. Bremen Bremen Deu

関連論文

• Full-Band Monte Carlo Device Simulation of a Si/SiGe-HBT with a Realistic Ge Profile (Special lssue on SISPAD'99)
• Efficient Full-Band Monte Carlo Simulation of Silicon Devices (Special Issue on TCAD for Semiconductor Industries)
• In-Advance CPU Time Analysis for Stationary Monte Carlo Device Simulations(the IEEE International Conference on SISPAD '02)

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