RF Analysis Methodology for Si and SiGe FETs Based on Transient Monte Carlo Simulation (Special lssue on SISPAD'99)
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概要
- 論文の詳細を見る
A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si : SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed.
- 社団法人電子情報通信学会の論文
- 2000-08-25
著者
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Barker J
The Department Of Electronics And Electrical Engineering University Of Glasgow
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Roy Scott
the Department of Electronics and Electrical Engineering, University of Glasgow
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Kaya Savas
the Department of Electronics and Electrical Engineering, University of Glasgow
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Asenov Asen
the Department of Electronics and Electrical Engineering, University of Glasgow
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Barker John
the Department of Electronics and Electrical Engineering, University of Glasgow
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Roy Scott
The Department Of Electronics And Electrical Engineering University Of Glasgow
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Kaya Savas
The Department Of Electronics And Electrical Engineering University Of Glasgow
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Asenov A
Univ. Glasgow Glasgow Gbr
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